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Science & Tech.
Pradeep Kumar

19/03/21 09:00 AM IST

Source: PIB

High Electron Mobility Transistor

Context

Power electronic systems demand high blocking voltage in OFF-state and high current in ON-state for efficient switching performance.

In news

Scientists from Bangalore have developed a highly reliable, High Electron Mobility Transistor (HEMTs)

Details
  • It is a normally OFF device and can switch currents up to 4A and operates at 600V.
  • It  is in the OFF state by default and works like any other commonly used power transistor.
  • Such transistors are called e-mode or enhancement mode transistors. 
  • This first-ever indigenous HEMT device made from gallium nitride (GaN) is useful in electric cars, locomotives, power transmission and other areas requiring high voltage and high-frequency switching would reduce the cost of importing such stable and efficient transistors required in power electronics.
  • HEMTs made of aluminium gallium nitride/ gallium nitride (AlGaN/GaN) provides an edge over silicon-based transistors as they allow the systems to operate at very high voltages, switch ON and OFF faster, and occupy less space. 
Source: PIB

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