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Mahesh

16/07/22 13:53 PM IST

New memory device with excellent switching characteristics

In News 
  • Scientists have developed a memory device with excellent switching characteristics and low-power requirements for data storage applications.
About the discovery 
  • Resistive memory devices with insulating film sandwiched between electrodes can address the needs of high-performance, and high-density memories with low power requirements for data storage.
  • They are devices with resistive switching characteristics which refers to the physical phenomena in which a dielectric (electrical insulator that can be polarised by an applied electric current) suddenly changes its (two terminal) resistance under the action of a strong current.
  • An autonomous institution of Department of Science and Technology, Govt. of India (DST), have developed a low-power memory device with excellent switching characteristics made from the chemical hafnium oxide, a replacement for silicon oxide, for data storage applications.
  • They have used hafnium oxide (HfO2), an insulator which can be polarised on application of electric current as an insulating layer.
  • They prepared with by a method called sputtering deposition method.
  • It is a physical vapour deposition technique in which energetic ions are used to knock off the atoms or molecules from the desired ‘target’ material and deposit them onto a substrate.
Source- PIB 

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